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Drift fields and boundary conditions at grain boundaries in bipolar p/n junction silicon devices

by: Chen, Yueh-Hsin, 1949-

Publication date: 1984

Topics: Solar cells, Bipolar transistors, Drift mobility, Grain boundaries

Collection: UFRDS; univ_florida_smathers; americana

Digitizing sponsor: University of Florida, George A. Smathers Libraries

Contributor: University of Florida, George A. Smathers Libraries

Language: English

Click here to view the University of Florida catalog record

Addeddate: 2016-05-10 12:46:12

Copyright_message: This item may be protected by copyright and is made available here under a claim of fair use pursuant to the UF Smathers Libraries Retrospective Dissertation Scanning Project Policy (http://ufdc.ufl.edu/IR00003870/00001) for non-profit research and educational purposes only. All other uses may require permission of the copyright holder.

External-identifier: urn:oclc:record:1043040399

Identifier: driftfieldsbound00chen

Identifier-ark: ark:/13960/t0fv38b1v

Invoice: 1043

Ocr: ABBYY FineReader 11.0

Openlibrary_edition: OL25920822M

Openlibrary_work: OL17343825W

Page-progression: lr

Pages: 105

Possible copyright status: Copyright held by the author. Any reuse of this item in excess of fair use or other copyright exemptions requires permission of the copyright holder.

Full catalog record: MARCXML

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Uploaded by associate-cheri-destefano on May 10, 2016

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